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| AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V (VGS = 10V) ID = 3.1A RDS(ON) < 130m (VGS = 10V) RDS(ON) < 165m (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady State 75 25 3.1 2.4 15 2 1.3 10 15 -55 to 150 1.1 0.7 2.3 1.8 Units V V A W A mJ C Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 50 82 41 Max 62.5 110 50 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4850 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=3.1A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=3.1A TJ=125C 1 15 105 158 126 10 0.77 1 2.5 290 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.14 VGS=10V, VDS=30V, ID=3.1A 2.34 0.97 1.18 4 VGS=10V, VDS=30V, RL=9.7, RGEN=3 IF=3.1A, dI/dt=100A/s 3.4 14.4 2.4 30.2 21.5 45 3.5 7 380 130 195 165 2.3 Min 75 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 1: May. 2007 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 6V 12 10V 15 5V VDS=5V 4.5V 12 ID (A) 6 4V ID(A) 6 125C 3 25C 0 4 5 1 9 9 3 VGS=3.5V 0 0 1 2 3 VDS (Volts) Fig 1: On-Region Characteristics 200 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 1.4 1.2 1 VGS=10V ID=3.1A VGS=4.5V ID=2A RDS(ON) (m) VGS=4.5V 140 VGS=10V, VDS=15V, ID=7.4A 110 VGS=10V VGS=10V, VDS=15V, RL=2.0, RGEN=3 80 0.8 0.6 -50 -25 0 25 50 75 50 0 2 4 IF=7.4A, dI/dt=100A/s 6 8 10 ID Figure 3: On-Resistance vs. Drain Current and Gate Voltage I =7.4A, dI/dt=100A/s (A) F Normalized On-Resistance 170 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 210 ID=3.1A 180 1.0E+02 1.0E+01 1.0E+00 RDS(ON) (m) 1.0E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 120 25C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-03 OUT OF SUCH APPLICATIONS OR USES OF ITS 25C PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 90 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 60 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. IS (A) 150 125C 125C 1.0E-01 www.aosmd.com AO4850 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID=3.1A Capacitance (pF) 500 400 Ciss 300 200 Coss 100 Crss 0 0 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 10 20 60 100.0 40 TJ(Max)=150C TA=25C 10.0 ID (Amps) VGS=10V, VDS=15V, ID=7.4A30 10ms 0.1s 1ms Power (W) RDS(ON) limited 100s 20 10s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VGS=10V, VDS=15V, RL=2.0, RGEN=3 1s DC 10s 10 IF=7.4A, dI/dt=100A/s IF VDS (Volts)=7.4A, 10 dI/dt=100A/s 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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